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ISO 5618-1:2023

Current Revision

Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for GaN crystal surface defects - Part 1: Classification of defects

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This document gives a classification of the dislocations and process-induced defects, from among the various surface defects, that occur on single-crystal gallium nitride (GaN) substrates or single-crystal GaN films.

It is applicable to the dislocations and process-induced defects exposed on the surface of the following types of GaN substrates or films:

—     single-crystal GaN substrate;

—     single-crystal GaN film formed by homoepitaxial growth on a single-crystal GaN substrate;

—     single-crystal GaN film formed by heteroepitaxial growth on a single-crystal aluminium oxide (Al2O3), silicon carbide (SiC) or silicon (Si) substrate.

It is not applicable to defects exposed on the surface if the absolute value of the acute angle between the surface normal and the c-axis of GaN is   8°.


SDO ISO: International Organization for Standardization
Document Number ISO 5618
Publication Date Not Available
Language en - English
Page Count
Revision Level
Supercedes
Committee ISO/TC 206
Publish Date Document Id Type View
Not Available ISO 5618-1:2023 Revision