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ISO 21466:2019

Current Revision

Microbeam analysis - Scanning electron microscopy - Method for evaluating critical dimensions by CD-SEM

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This document specifies the structure model with related parameters, file format and fitting procedure for characterizing critical dimension (CD) values for wafer and photomask by imaging with a critical dimension scanning electron microscope (CD-SEM) by the model-based library (MBL) method. The method is applicable to linewidth determination for specimen, such as, gate on wafer, photomask, single isolated or dense line feature pattern down to size of 10 nm.


SDO ISO: International Organization for Standardization
Document Number ISO 21466
Publication Date Not Available
Language en - English
Page Count
Revision Level
Supercedes
Committee ISO/TC 202/SC 4
Publish Date Document Id Type View
Not Available ISO 21466:2019 Revision