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ISO 14701:2018

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Surface chemical analysis - X-ray photoelectron spectroscopy - Measurement of silicon oxide thickness

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This document specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished samples and for instruments that incorporate an Al or Mg X-ray source, a sample stage that permits defined photoelectron emission angles and a spectrometer with an input lens that can be restricted to less than a 6° cone semi-angle. For thermal oxides in the range 1 nm to 8 nm thickness, using the best method described in this document, uncertainties, at a 95 % confidence level, could typically be around 2 % and around 1 % at optimum. A simpler method is also given with slightly poorer, but often adequate, uncertainties.


SDO ISO: International Organization for Standardization
Document Number ISO 14701
Publication Date Not Available
Language en - English
Page Count
Revision Level
Supercedes
Committee ISO/TC 201/SC 7
Publish Date Document Id Type View
Not Available ISO 14701:2018 Revision