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IEEE 641-1987

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IEEE Standard Definitions and Characterization of Metal Nitride Oxide Semiconductor Arrays

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New IEEE Standard - Inactive-Withdrawn. This standard has ten sections: an introduction to the MNOS device and memory array; symbols and definitions; references that contain added detail on specific concepts; MNOS arrays and functional operations; MNOS array retention; MNOS array endurance property; reliability considerations for MNOS arrays; the testing methodology necessary to establish the unique properties of the MNOS array for both the consumer and the producer; radiation effects on MNOS arrays; and nonvolatile memory technology, called floating-gate.

SDO IEEE: Institute of Electrical and Electronics Engineers
Document Number 641
Publication Date Oct. 7, 1988
Language en - English
Page Count 34
Revision Level
Supercedes
Committee
Publish Date Document Id Type View
Oct. 7, 1988 641-1987 Revision