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IEEE 300-1969

Historical Revision

USA Standard and IEEE Test Procedure for Semiconductor Radiation Detectors (For Ionizing Radiation)

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- Superseded. Semiconductor radiation detectors have come into widespread use in recent years for detection and high-resolution spectroscopy of ionizing radiation. Both silicon and germanium detectors have been developed, with silicon finding its principal application in the detection and analysis of heavy charged particles. Germanium detectors with their relatively high atomic number (as compared with silicon) and with large sensitive volumes have come into widespread use in the detection and analysis of gamma radiation. The rapid development and utilization of these detectors have made desirable standard test procedures so that measurements may have the same meaning to all manufacturers and users. This Test Procedure is not intended to imply that all tests described herein are mandatory, but only that such tests as are carried out on completed devices should be performed in accordance with the procedures given. A companion document is "Test Procedure for Amplifiers and Preamplifiers for Semiconductor Radiation Detectors," IEEE Standards Publication No. 301.
The definition of a semiconductor radiation detector herein will be: A semiconductor device that utilizes the production and motion of excess free charge carriers for the detection and measurement of incident radiation. Test procedures for the associated amplifiers and preamplifiers are described in "USA Standard and IEEE Test Procedure for Amplifiers and Preamplifiers for Semiconductor Radiation Detectors" (USAS N42.2 and IEEE 301).

SDO IEEE: Institute of Electrical and Electronics Engineers
Document Number 300
Publication Date Nov. 30, 1968
Language en - English
Page Count 14
Revision Level
Supercedes
Committee
Publish Date Document Id Type View
Dec. 29, 1988 300-1988 Revision
Nov. 30, 1968 300-1969 Revision