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ASTM F980M-96

Current Revision

Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices [Metric]

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1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage is usually associated with bipolar technologies.

1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.


SDO ASTM: ASTM International
Document Number F980
Publication Date Jan. 1, 1996
Language en - English
Page Count 5
Revision Level 96
Supercedes
Committee F01.11
Publish Date Document Id Type View
Jan. 1, 1996 F0980M-96 Revision
June 10, 1996 F0980M-96R03 Reaffirmation