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ASTM F980-92

Historical Revision

Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices

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1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage is usually associated with bipolar technologies.

1.2 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of whoever uses this standard to consult and establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard information is given in 4.2.7.


SDO ASTM: ASTM International
Document Number F980
Publication Date Jan. 1, 1992
Language en - English
Page Count 5
Revision Level 92
Supercedes
Committee F01.11
Publish Date Document Id Type View
Dec. 1, 2016 F0980-16 Revision
Dec. 1, 2010 F0980-10E01 Revision
June 10, 1996 F0980-10 Revision
Jan. 1, 1992 F0980-92 Revision
Jan. 1, 2024 F0980-16R24 Reaffirmation