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ASTM F1725-97

Historical Revision

Standard Guide for Analysis of Crystallographic Perfection of Silicon Ingots

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1.1 This practice covers the analysis of the crystallographic perfection in silicon ingots. The steps described are sample preparations, etching solution selection and use, defect identification, and defect counting.

1.2 This practice is suitable for use if evaluating silicon grown in either (111) or (100) direction and doped either p or n type with resistivity greater than 0.005 Omega cm.

1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.


SDO ASTM: ASTM International
Document Number F1725
Publication Date June 10, 1997
Language en - English
Page Count 3
Revision Level 97
Supercedes
Committee F01.06
Publish Date Document Id Type View
Dec. 10, 2002 F1725-02 Revision
June 10, 1997 F1725-97 Revision