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ASTM F1709-97(2016)

Current Revision

Standard Specification for High Purity Titanium Sputtering Targets for Electronic Thin Film Applications (Withdrawn 2023)

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1.1 This specification covers pure titanium sputtering targets used as a raw material in fabricating semiconductor electronic devices.

1.2 This standard sets purity grade levels, physical attributes, analytical methods, and packaging.

1.2.1 The grade designation is a measure of total metallic impurity content. The grade designation does not necessarily indicate suitability for a particular application because factors other than total metallic impurity may influence performance.


This specification covers high purity titanium sputtering targets for use as raw material in the fabrication of semiconductor electronic thin films. Material covered by this specification comprises Grades 4N, 4N5, and 5N titanium sputtering targets, the grades of which are based on the total metallic impurity content. The target shall be manufactured free of any contaminates such as dirt or oils and with average and maximum grain sizes in conformity with the requirements specified. The target shall be analyzed for trace metallic impurities, carbon, oxygen, sulfur, nitrogen, and hydrogen and shall conform to the grade requirements and the acceptable and minimum detection limits specified.


SDO ASTM: ASTM International
Document Number F1709
Publication Date May 1, 2016
Language en - English
Page Count 3
Revision Level 97(2016)
Supercedes
Committee F01.17
Publish Date Document Id Type View
May 1, 2016 F1709-97R16 Revision
Jan. 1, 1996 F1709-97 Revision
June 15, 2008 F1709-97R08 Reaffirmation
Dec. 10, 2002 F1709-97R02 Reaffirmation