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ASTM F1630-00

Current Revision

Standard Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities (Withdrawn 2003)

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This standard was transferred to SEMI (www.semi.org) May 2003

1.1 This test method covers the determination of electrically active boron, phosphorus, arsenic, aluminum, antimony, and gallium concentration in single crystal silicon.

1.2 This test method can be used for silicon in which the impurity/dopant concentrations are between 0.01 ppba and 5.0 ppba for each of the electrically active elements.

1.3 The concentration for each impurity/dopant can be obtained by application of Beer's Law. Calibration factors are given for each element.

1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.


SDO ASTM: ASTM International
Document Number F1630
Publication Date Dec. 10, 2000
Language en - English
Page Count 6
Revision Level 00
Supercedes
Committee F01.06
Publish Date Document Id Type View
Dec. 10, 2000 F1630-00 Revision