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ASTM F1262M-95

Historical Revision

Standard Guide for Transient Radiation Upset Threshold Testing of Digital Integrated Circuits (Metric) (Withdrawn 2023)

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1.1 This guide is to assist experimenters in measuring the transient radiation upset threshold of silicon digital integrated circuits exposed to pulses of ionizing radiation greater than 103 Gy (Si)/s.

1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.


SDO ASTM: ASTM International
Document Number F1262
Publication Date Nov. 10, 1995
Language en - English
Page Count 5
Revision Level 95
Supercedes
Committee F01.11
Publish Date Document Id Type View
June 1, 2014 F1262M-14 Revision
Nov. 10, 1995 F1262M-95 Revision
June 15, 2008 F1262M-95R08 Reaffirmation
Dec. 10, 2002 F1262M-95R02 Reaffirmation