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ASTM F1190-93

Historical Revision

Standard Guide for Neutron Irradiation of Unbiased Electronic Components

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1.1 This practice applies to the exposure of unbiased silicon (Si) or gallium arsenide (GaAs) semiconductor components to neutron radiation from a nuclear reactor source. Only the conditions of exposure are addressed in this practice. The effects of radiation on the test sample should be determined using appropriate electrical test methods.

1.2 System and subsystem exposures and test methods are not included in this practice.

1.3 This practice is applicable to irradiations conducted with the reactor operating in either the pulsed or steady-state mode. The practical limits for neutron fluence ([phi]eq,1MeV,Si or [phi]eq,1MeV,GaAs) in semiconductor testing range from approximately 10 to 10 16 n/cm .

1.4 This practice addresses those issues and concerns pertaining to irradiations with neutrons of energies greater than 10 keV.

1.5 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.


SDO ASTM: ASTM International
Document Number F1190
Publication Date Jan. 10, 1999
Language en - English
Page Count 5
Revision Level 93
Supercedes
Committee F01.11
Publish Date Document Id Type View
May 1, 2024 F1190-24 Revision
March 1, 2018 F1190-18 Revision
Oct. 1, 2011 F1190-11 Revision
Jan. 10, 1999 F1190-99 Revision
Jan. 10, 1999 F1190-93 Revision
Jan. 1, 2005 F1190-99R05 Reaffirmation